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Proceedings Paper

Defect printability and inspection of EUVL mask
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Paper Abstract

Defect printability and inspection studies were conducted on a programmed EUV defect mask. The mask was fabricated using Ta-based absorber stack on a Mo/Si multilayer coated 6025 plate. The defect pattern contains a variety of types of defects. The defect printing was performed on the Engineering Test Stand (ETS), which is the 0.1 NA EUV scanner at Sandia National Laboratories in Livermore, CA. The result showed that the printability of defects depended on the defect type and that either notches in or protrusions from absorber lines were the first to print. The minimum printable defect size was approximately 15 nm (1X). Defect inspection was performed on a 257-nm wavelength mask inspection system in die-to-die mode. Seventy-eight out of 120 programmed defects were detected when using 50% detection sensitivity. Maximum detection sensitivity was also tried. However, the number of defects is overwhelmed by the nuisance defects. The minimum defect detected was 52 nm in width. Simulations with a 2-D scalar model are used to verify the results.

Paper Details

Date Published: 6 December 2004
PDF: 10 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569318
Show Author Affiliations
Bing Lu, Freescale Semiconductor, Inc. (United States)
James R. Wasson, Freescale Semiconductor, Inc. (United States)
Pawitter J.S. Mangat, Motorola Labs. (United States)
Jonathan L. Cobb, Freescale Semiconductor, Inc. (United States)
Scott D. Hector, Freescale Semiconductor, Inc. (United States)
Donald W. Pettibone, KLA-Tencor Corp. (United States)
Donna O'Connell, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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