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Proceedings Paper

Advanced CD control technologies for EB mask writer
Author(s): Hajime Kawano; Yasuhiro Kadowaki; Kazui Mizuno; Hiroyuki Ito
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Paper Abstract

With the rapid progress in the minimization in the device fabrication, it comes to be indispensable to reduce Critical Dimensional (CD) error in the mask production. The electron beam mask lithography system HL-7000M series has been developed, to meet the needs for mass production line below 90 nm node. A novel high-accuracy Proximity Effect Correction (PEC) method of exposure correction for pattern density variation is applied in this system. By using this high accuracy PEC method, CD error caused by proximity effects has been reduced to 4 nm, from 14 nm with the conventional PEC method.

Paper Details

Date Published: 6 December 2004
PDF: 6 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569317
Show Author Affiliations
Hajime Kawano, Hitachi High-Technologies Corp. (Japan)
Yasuhiro Kadowaki, Hitachi High-Technologies Corp. (Japan)
Kazui Mizuno, Hitachi High-Technologies Corp. (Japan)
Hiroyuki Ito, Hitachi High-Technologies Corp. (Japan)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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