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Proceedings Paper

Self-assembled monolayer modifications of organic thin film transistors
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Paper Abstract

Future generations of flexible, transparent electronics will require the use of polymer based thin-film transistors (TFTs) exhibiting high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. We investigate the nanoscale, self-assembled monolayer (SAM) influence on organic-based thin film transistors (OTFT) at the interface between semiconducting polymer and both the source/drain metal contacts and the insulator. Capacitance-voltage (C-V) characteristics help to elucidate the role of SAMs in the OTFT structure and the charge injection mechanism. Positive trends and parasitic effects are also addressed in characterization.

Paper Details

Date Published: 19 January 2005
PDF: 6 pages
Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, (19 January 2005); doi: 10.1117/12.569304
Show Author Affiliations
Ivan Shuvalov, Univ. of Washington (United States)
Rhys Lawson, Univ. of Washington (United States)
Hong Ma, Univ. of Washington (United States)
Alex K.-Y. Jen, Univ. of Washington (United States)
Larry Raymond Dalton, Univ. of Washington (United States)

Published in SPIE Proceedings Vol. 5592:
Nanofabrication: Technologies, Devices, and Applications
Warren Y-C. Lai; Stanley Pau; O. Daniel Lopez, Editor(s)

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