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Proceedings Paper

Relationship between DUV lithography and etch for pattern transfer
Author(s): Joyce Z. Witowski; Elliott Sean Capsuto; Satyendra S. Sethi; John Kochan
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Paper Abstract

The development of tools and processes for a stable patterning process must successfully integrate the lithography and etch modules into a workable unit. As lithography becomes increasingly complex, such as in the case of excimer laser DUV photolithography, the link between the two processing steps becomes even more critical. This work characterized some of the challenges of integrating a DUV lithography process with the standard etching modules. The process studied utilized a negative acting photoresist and a spin-on Anti Reflection Coating. Pattern transfer processes were characterized in terms of critical dimension control, contamination concerns and critical dimension repeatability. Further, the effect of critical lithography parameters were examined as to their modulation of post etch profile characteristics and the effect on focus latitude.

Paper Details

Date Published: 1 February 1992
PDF: 13 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56928
Show Author Affiliations
Joyce Z. Witowski, SEMATECH Inc. (United States)
Elliott Sean Capsuto, SEMATECH Inc. (United States)
Satyendra S. Sethi, SEMATECH Inc. (United States)
John Kochan, SEMATECH Inc. (United States)


Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

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