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Proceedings Paper

Numerical and experimental study of oxide growth on EUV mask capping layers
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Paper Abstract

The interface roughness of EUV mask multilayers was taken into account for the numerical calculation of blank reflectance, and models for the growth of oxide on Si capping layers were proposed and evaluated. The simulations were then checked and validated with reflectometry measurements at different steps of the mask blank processing as well as for various angles of incidence, and ellipsometry data on layer thickness. The benchmarked models made it possible to characterize EUV mask blank Mo/Si multilayers (period, thickness ratio, number of bilayers), as well as Si capping layers and native oxide layers from reflectivity measurements. This enabled the study, via a combination of experiments and simulations, of the growth of SiO2 layers, bringing deeper understanding into this phenomenon. Finally, the simulations were used to more properly optimize multilayers and quantify the influence of the exposure tool illumination numerical aperture. Having successfully matched reflectivity data around the actinic wavelength, it was also possible to extend the models to inspection wavelengths in order to predict inspection contrast values.

Paper Details

Date Published: 6 December 2004
PDF: 11 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569276
Show Author Affiliations
Eric P. Cotte, Advanced Mask Technology Ctr. (Germany)
Christian Holfeld, Advanced Mask Technology Ctr. (Germany)
Uwe Dersch, Advanced Mask Technology Ctr. (Germany)
Guenther Ruhl, Infineon Technologies AG (Germany)
Jan Perlich, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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