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Proceedings Paper

ArF lithography reticle crystal growth contributing factors
Author(s): Florence Eschbach; Daniel Selassie; Peter Sanchez; Daniel Tanzil; Vikram Tolani; Mahmood Toofan; Huiying Liu; Barbara Greenebaum; Michael Murray; Raul Villacorta
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Paper Abstract

The formation of photoinduced crystals and haze has become a challenge for 193nm photolithography high volume manufacturing (1-6). Extensive work has been performed to develop alternative to piranha chemistry for photomask cleaning processes in an attempt to eliminate the incidence of clean induced ammonium sulfate crystal formation (9-13). However, additional factors are impacting 193nm reticle optical quality. Sources of molecular contaminants such as environmental factors, outgasing from pellicle and reticle storage material can generate varieties of photoinduced crystals over the reticle useable lifetime (5-6). This paper will quantify and rank contributing factors for crystals generated under high energy UV exposure. A broad range of analytical and metrology techniques (FTIR, IC, TD-GC/MS, Inorganics impinger, AIMSTM, KLA Starlight, UV 172nm) and improvements in technique sensitivity were developed in order to identify crystal structure, quantify photogenerated contaminants levels and assess wafer printability impact. Engineering systems aimed at minimizing organic and inorganic molecular contaminants levels will be suggested.

Paper Details

Date Published: 6 December 2004
PDF: 9 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569272
Show Author Affiliations
Florence Eschbach, Intel Corp. (United States)
Daniel Selassie, Intel Corp. (United States)
Peter Sanchez, Intel Corp. (United States)
Daniel Tanzil, Intel Corp. (United States)
Vikram Tolani, Intel Corp. (United States)
Mahmood Toofan, Intel Corp. (United States)
Huiying Liu, Intel Corp. (United States)
Barbara Greenebaum, Intel Corp. (United States)
Michael Murray, Intel Corp. (United States)
Raul Villacorta, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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