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Proceedings Paper

Photochemical etching and oxidation of GaSb stimulated by pulsed UV laser irradiations
Author(s): Etienne J. Petit; Y. Caudano; A. Gouskov; Georges Bougnot
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Paper Abstract

Surface cleaning by pulsed UV-laser (wavelength = 193 nm) annealing in vacuo and laser-enhanced oxidation of GaSb single crystals in air are investigated by Auger and X-ray photoelectron spectroscopies. Superficial etching observed below energy densities of 100 mJ/cm2 is due to desorption of the Sb-oxides stimulated by photolysis. Above this threshold, the remaining Ga oxides are burried into the melted layer. The photolysis of the oxide also stimulates a layer-by-layer oxidation when GaSb is irradiated in air at lower energy densities (1 to 3 mJ/cm2 ).

Paper Details

Date Published: 1 February 1992
PDF: 12 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56926
Show Author Affiliations
Etienne J. Petit, Univ. Notre-Dame de la Paix (Belgium)
Y. Caudano, Univ. Notre-Dame de la Paix (Belgium)
A. Gouskov, Univ. des Sciences et des Techniques du Languedoc (France)
Georges Bougnot, Univ. des Sciences et des Techniques du Languedoc (France)

Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

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