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Proceedings Paper

Closing the defect printability loop: optimizing defect specifications for an established lithographic process
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Paper Abstract

This paper details a study undertaken to revisit defect specifications and maskshop metrology calibration for a mature lithographic process. A programmed array was created containing darkfield and brightfield feature types at various pitches with appropriate OPC sizing. Defects were systematically added to the layout with differing sizes and spacing from the main feature. After exposure with production illumination settings, resist image data was collected and used to determine critical defect sizes. These results are correlated with typical maskshop metrology methods such as AIMS, AVI Photomask Defect Metrology Software (PDMS), and CDSEM. In some cases, it is shown that AIMS data correlates poorly with both defect size and spacing from the feature edge when using illumination settings nominally matched to the exposure tool. Finally, for the particular processes reviewed in this study, the results indicate that the initial reticle defect specifications are often too aggressive for the finalized production lithographic process.

Paper Details

Date Published: 6 December 2004
PDF: 7 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569257
Show Author Affiliations
Kyle Patterson, Freescale Semiconducteurs Ctr. de Recherches Crolles SAS (France)
Clare Wakefield, Photronics, Inc. (United Kingdom)
Pierre Sixt, Photronics, Inc. (France)
Frank Sundermann, STMicroelectronics (France)
Yorick Trouiller, CEA-LETI (France)
Jerome Belledent, Philips Semiconductors (France)
Christophe Couderc, Philips Semiconductors (France)
Yves Rody, Philips Semiconductors (France)
Kevin Lucas, Freescale Semiconducteurs Ctr. de Recherches Crolles SAS (France)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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