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Proceedings Paper

Chemically assisted ion beam etching of GaAs and GaSb using reactive flux of iodine and Ar+ beam
Author(s): Lalit M. Bharadwaj; P. Bonhomme; J. Faure; G. Balossier; Ram P. Bajpai
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Paper Details

Date Published: 1 February 1992
PDF: 7 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56924
Show Author Affiliations
Lalit M. Bharadwaj, Central Scientific Instruments Organization (India)
P. Bonhomme, Univ. de Reims (France)
J. Faure, Univ. de Reims (France)
G. Balossier, Univ. de Reims (France)
Ram P. Bajpai, Central Scientific Instruments Organization (India)

Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

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