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Proceedings Paper

Mechanisms of silicon oxide etching in a highly polymerized fluorocarbon plasma
Author(s): Naokatsu Ikegami; Nobuo Ozawa; Yasuhiro Miyakawa; Jun Kanamori
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Paper Abstract

Reactive-ion-etching (RIE) induced surface modifications of SiO2 and phosphosilicate glass (PSG) were investigated using thermal desorption mass spectroscopy (TDS) and X-ray photoelectron spectroscopy (XPS), in order to study their reactivity variance in the highly polymerized fluorocarbon plasma. Ar+ induced reactions between the fluorocarbon adsorption layer and the underlying oxide substrates were also examined. At the C,F-film/substrate interface, the adsorption layer was found to be chemisorbed to the substrates. Both SiO2 and PSG were found to react in a very near surface region, chiefly with the adsorption layer, by reflecting the reactivity in SiOxFy reaction layer below the surface. The mechanisms of the reactivity variance were explained by the difference in density of active sites for unsaturated CFX chemisorption induced by ion bombardment, and the variance of Si-O bond breakability of the substrates. These effects are caused by the existence of P-O or P = 0 bonds in PSG. Fluorocarbon chemisorption layers were also observed to be thermally stimulated to react with the substrates in TDS apparatus with to activation energy of approximately 1.9eV. This observation indicates the possibility that chemical sputtering easily occurs in actual RIE through a thermally excited step, induced by ion bombardment.

Paper Details

Date Published: 1 February 1992
PDF: 11 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56923
Show Author Affiliations
Naokatsu Ikegami, OKI Electric Industry Co., Ltd. (Japan)
Nobuo Ozawa, OKI Electric Industry Co., Ltd. (Japan)
Yasuhiro Miyakawa, OKI Electric Industry Co., Ltd. (Japan)
Jun Kanamori, OKI Electric Industry Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

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