Share Email Print

Proceedings Paper

Defect inspection and repair performance on CPL masks for 90- and 65-nm node line patterns
Author(s): Yasutaka Morikawa; Kouichirou Kojima; Hiroyuki Hashimoto; Yuuichi Yoshida; Shiho Sasaki; Hiroshi Mohri; Naoya Hayashi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Chrome-less Phase Lithography (CPL) technology is introduced as one of the key Resolution Enhancement Technologies for the application of 90 and 65nm node logic gate layer. From the view point of mask manufacturing, one of the strong points is that it doesn’t require complicated data division process into two complementary patterns, such as for double exposure AAPSM technology, and is possible to prepare the data by extension of EAPSM design technology. Another is the point of having a good wafer printing performance which is not inferior to AAPSM by giving the optimum exposure condition for a pattern. Although the optimization of OPC tuning is required, if a perfect mask manufacturing process is developed, it will be considered very feasible RET technology. While a mask process is important, establishment of inspection and repair technology is also very important. We have designed and fabricated a CPL defect test mask which has 90nm and 65nm technology nodes Line patterns for ArF lithography. By using this defect test mask, we will report defect detectability which was evaluated by several inspection systems. And also we will show the defect printability results by Zeiss MSM193 simulation microscope to confirm how the defect will affect to printing results. We also show repair performance of RAVE Nano-machining technology with the confirmation of printability by AIMS tool. Finally, we will discuss about when and how many inspections will be required in the CPL mask process.

Paper Details

Date Published: 6 December 2004
PDF: 10 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569186
Show Author Affiliations
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Kouichirou Kojima, Dai Nippon Printing Co., Ltd. (Japan)
Hiroyuki Hashimoto, Dai Nippon Printing Co., Ltd. (Japan)
Yuuichi Yoshida, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

© SPIE. Terms of Use
Back to Top