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Proceedings Paper

ECR plasma and etch characterization of photoresist dry etch processes
Author(s): Kyoung Youn Cho; Dong Won Im
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Paper Abstract

Photoresist dry etching processes by a down-stream type ECR plasma etcher were characterized. The etched photoresist profile and etch rates were obtained by scanning electron microscope (SEM) photographs and an optical thickness monitoring instrument, respectively. The mask used for PR etch tests has 1 um pitched line & space patterns. It was found that C12 addition to 02 plasma can passivate PR side walls. The etch profiles of PR vary critically with the main coil current changes. The etch rate has maximum of 4800 Å/min and the etch uniformity has a minimum value of 5.4 %. The dc bias voltage (Vdc) variations are closely related to the etch profiles. Vdc decreases when PR etching is completed and substrates are exposed to the plasma. The wafers with different thin film materials induce different Vdc for a same process condition. The plasma properties were measured by a Langmuir probe. The N2 addition to 02 plasma were also tested. However, the critical effect of the main coil current was not found for the N2 processes. A model was formulated to explain the difference between C12 processes and N2 processes with an equivalent circuit method.

Paper Details

Date Published: 1 February 1992
PDF: 11 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56918
Show Author Affiliations
Kyoung Youn Cho, Samsung Electronics (South Korea)
Dong Won Im, Samsung Electronics (South Korea)

Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

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