Share Email Print

Proceedings Paper

Interferometric monitoring and control of silicon incorporation in the diffusion-enhanced silylated resist process
Author(s): Maureen A. Hanratty; Ajit P. Paranjpe; Steven A. Henck; Rhett Barry Jucha
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The diffusion enhanced silylated resist or DESIRER process is a well known surface imaging lithographic technique consisting of three steps: exposure, silylation, and dry develop. The success of this method for patterning submicron features depends critically on controlling silicon incorporation in the resist. In this report interferometric data obtained during the resist silylation step and subsequent dry develop etch have been used to correlate silylation parameters and exposure dose with the depth of silicon incorporation. Contrast and linewidth variation as a function of silylation depth have been derived. A kinetics model in conjunction with image intensity simulations has been used to understand the effects of process parameters on pattern quality. The potential of using the interferometric data for process monitoring is also discussed.

Paper Details

Date Published: 1 February 1992
PDF: 12 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56917
Show Author Affiliations
Maureen A. Hanratty, Texas Instruments Inc. (United States)
Ajit P. Paranjpe, Texas Instruments Inc. (United States)
Steven A. Henck, Texas Instruments Inc. (United States)
Rhett Barry Jucha, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

© SPIE. Terms of Use
Back to Top