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Proceedings Paper

Mathematical model of the plasma etching of resists containing silicon
Author(s): Dan V. Nicolau; Gheorghita Jinescu; Florin Fulga; Mircea V. Dusa
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Paper Abstract

The paper deals with the simulation of the etching step of resists containing silicon, Hith special attention on DESIRE technology, for which purpose a general mathematical model is built which emphasizes the role of the gas-solid reaction at the interface plasma/polymer. Some preliminary simulation results are presented.

Paper Details

Date Published: 1 February 1992
PDF: 11 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56916
Show Author Affiliations
Dan V. Nicolau, ICCE (Romania)
Gheorghita Jinescu, Polytechnical Institute/Bucharest (Romania)
Florin Fulga, ICCE (Romania)
Mircea V. Dusa, SEEQ Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

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