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Proceedings Paper

Consideration on the resolution limit of the resist silylated process
Author(s): Keisuke Tanimoto; Hiroyuki Komeda; Daisuke Takehara; Ryohei Kawabata; Hikou Shibayama
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Paper Abstract

In order to find out the factors determining the resolution on the resist silylated process, we evaluated factors for each stage of pattern generation process. It is found that the silylated layer is formed as a result of the light energy distribution. Moreover, it can be explained that side etching brought about the degradation of vertical etching rate in fine slits (micro-loading effect). This micro-loading effect degrades the resolution slightly. Using a condition with minimized micro-loading effect, we obtained patterns with near vertical sidewall and with small linewidth difference between packed and isolated lines.

Paper Details

Date Published: 1 February 1992
PDF: 11 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56915
Show Author Affiliations
Keisuke Tanimoto, Sharp Corp. (Japan)
Hiroyuki Komeda, Sharp Corp. (Japan)
Daisuke Takehara, Sharp Corp. (Japan)
Ryohei Kawabata, Sharp Corp. (Japan)
Hikou Shibayama, Sharp Corp. (Japan)


Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

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