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Proceedings Paper

Characterization of silicon damage during LDD oxide spacer etch with the use of thermal-wave-modulated reflectance
Author(s): Karen A. Reinhardt; Francois M. Dumesnil
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Paper Abstract

A LDD (lightly doped drain) etch process has been developed that reduces the damage to the silicon substrate caused by the oxide etch step and removes the damaged silicon in a subsequent etch step. The underlying silicon has the damage level restored to that of unetched silicon, as measured with thermal wave modulated reflectance. Contact resistivity of the devices etched with the optimum etch process is substantially reduced compared to a standard process.

Paper Details

Date Published: 1 February 1992
PDF: 15 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56913
Show Author Affiliations
Karen A. Reinhardt, Advanced Micro Devices (United States)
Francois M. Dumesnil, Therma-Wave, Inc. (United States)


Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

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