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Proceedings Paper

Evaluation of silicon surface damage induced by plasma radiation
Author(s): Masahiro Yoneda; K. Kawai; Hiroshi Miyatake; Nobuo Fujiwara; K. Nishioka; Haruhiko Abe
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Paper Abstract

Etching damage is evaluated by the forward current characteristics of p+/n+ junction s formed directly on the damaged silicon surface. The sample has a double layer structure (poly-silicon/silicon dioxide), and the poly-silicon layer is removed by dry etching with gas plasma. The degree of degradation of the forward current characteristics by reactive ion etching (RIE; cathode coupling mode) is greater than that by plasma etching (PE; anode coupling mode). In the RIE mode, heavier damage is accumulated at the surface by the bombardment of high energy ions through the thin oxide layer and causes the recombination current. This evaluation method is sensitive and useful, and it can detect the very small radiation damage.

Paper Details

Date Published: 1 February 1992
PDF: 9 pages
Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); doi: 10.1117/12.56910
Show Author Affiliations
Masahiro Yoneda, Mitsubishi Electric Corp. (Japan)
K. Kawai, Mitsubishi Electric Corp. (Japan)
Hiroshi Miyatake, Mitsubishi Electric Corp. (Japan)
Nobuo Fujiwara, Mitsubishi Electric Corp. (Japan)
K. Nishioka, Mitsubishi Electric Corp. (Japan)
Haruhiko Abe, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1593:
Dry Etch Technology
Deepak Ranadive, Editor(s)

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