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Proceedings Paper

Effect of UV/O3 treatment on mask surface to reducing sulfuric residue ions
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Paper Abstract

The critical source of haze contamination which mainly occurred on MoSiN surface and the interface of MoSiN and quartz is known as sulfuric ions remained after mask process. In this experiment, the UV treatment with oxygen gas was carried out before and after wet cleaning process for reducing residue ions from mask surface, and the effect with the sequence of UV treatment and wet cleaning was investigated. The composition of amorphous MoSiN layer was slightly modified by 172nm UV treatment with oxygen gas, and the amount of chemical residue ions after wet cleaning which use the piranha and SC-1 was reduced according to the transformation of surface composite. And also the relation of the surface transformation and the phase shift after SC-1 cleaning was evaluated.

Paper Details

Date Published: 6 December 2004
PDF: 8 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569015
Show Author Affiliations
Dong Wook Lee, Hynix Semiconductor, Inc. (South Korea)
Ho Yong Jung, Hynix Semiconductor, Inc. (South Korea)
Mun Sik Kim, Hynix Semiconductor, Inc. (South Korea)
Jun Sik Lee, Hynix Semiconductor, Inc. (South Korea)
Yong Kyoo Choi, Hynix Semiconductor, Inc. (South Korea)
Oscar Han, Hynix Semiconductor, Inc. (South Korea)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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