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Proceedings Paper

Evaluation of multilayer damage in EUVL mask fabrication process
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Paper Abstract

To obtain a high throughput and good CD uniformity, the EUV reflectivity of EUVL masks must be high and very uniform. In this study, EUVL masks were fabricated, and the degradation in EUV reflectivity due to the fabrication process was evaluated. The damage to the multiplayer due to plasma etching appeared as a drop in peak reflectivity of about 2.0%. Etching the Cr buffer layer by a wet process reduced the value to within the measurement error. On the other hand, thermal damage appeared as both a drop in peak reflectivity and a shift in centroid wavelength. The drop in peak reflectivity was about 0.5-1.0% in the temperature range 140-240° C, and about 1.5% in the temperature range 260-280°C. The shift in centroid wavelength increased monotonically as the temperature rose from 180degrees C to 280°C. To ensure good CD uniformity, both the shift and the variation in centroid wavelength should be kept within ∓0.02 nm. If a drop in peak reflectivity of 1-2% is acceptable, annealing could be an effective way to adjust the centroid wavelength by as much as 0.10 nm with an accuracy of ∓0.01 nm.

Paper Details

Date Published: 6 December 2004
PDF: 8 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.568984
Show Author Affiliations
Yuusuke Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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