Share Email Print
cover

Proceedings Paper

Silicon avalanche photodiodes developed at the Institute of Electron Technology
Author(s): Iwona Wegrzecka; Maciej Wegrzecki; Jan Bar; Maria Grynglas; Andrzej Uszynski; Remigiusz Grodecki; Piotr B. Grabiec; Sylwester Krzeminski; Tadeusz Budzynski
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Silicon avalanche photodiodes (APDs) -- due to the effect of avalanche multiplication of carriers in their structure -- are most sensitive and fastest detectors of visible and near infrared radiation. Also the value of noise equivalent power NEP of these detectors is the smallest. In the paper, the design, technology and properties of the silicon avalanche photodiodes with a n+ - p - π - p+ epiplanar structure developed at the Institute of Electron Technology (ITE) are presented. The diameters of photosensitive area range from 0.3 mm to 5 mm. The ITE photodiodes are optimized for the detection of the 800 nm ÷ 850 nm radiation, but the detailed research on spectral dependencies of the gain and noise parameters has revealed that the spectral operating range of the ITE photodiodes is considerable wider and achieves 550 ÷ 1000 nm. These photodiodes can be used in detection of very weak and very fast optical signals. Presently in the world, the studies are carried out on applying the avalanche photodiodes in detection of X radiation and in the scintillation detection of nuclear radiation.

Paper Details

Date Published: 22 July 2004
PDF: 12 pages
Proc. SPIE 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, (22 July 2004); doi: 10.1117/12.568913
Show Author Affiliations
Iwona Wegrzecka, Institute of Electron Technology (Poland)
Maciej Wegrzecki, Institute of Electron Technology (Poland)
Jan Bar, Institute of Electron Technology (Poland)
Maria Grynglas, Institute of Electron Technology (Poland)
Andrzej Uszynski, Institute of Electron Technology (Poland)
Remigiusz Grodecki, Institute of Electron Technology (Poland)
Piotr B. Grabiec, Institute of Electron Technology (Poland)
Sylwester Krzeminski, Institute of Electron Technology (Poland)
Tadeusz Budzynski, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 5484:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II
Ryszard S. Romaniuk, Editor(s)

© SPIE. Terms of Use
Back to Top