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Proceedings Paper

Silicon photodiodes and PIN diodes developed at the Institute of Electron Technology
Author(s): Maciej Wegrzecki; Iwona Wegrzecka; Jan Bar; Wojciech Slysz; Maria Grynglas; Andrzej Uszynski; Remigiusz Grodecki; Piotr B. Grabiec; Sylwester Krzeminski; Tadeusz Budzynski; Andrzej Panas
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Paper Abstract

The paper presents the results of the work on high speed epiplanar photodiodes of a small active area used in laser and fiber-optic techniques and epiplanar diodes of a large active area destined for nuclear radiation detection. Also planar diodes with a large active area and thick active region assigned for detection of optical, nuclear and X radiation are discussed.

Paper Details

Date Published: 22 July 2004
PDF: 10 pages
Proc. SPIE 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, (22 July 2004); doi: 10.1117/12.568910
Show Author Affiliations
Maciej Wegrzecki, Institute of Electron Technology (Poland)
Iwona Wegrzecka, Institute of Electron Technology (Poland)
Jan Bar, Institute of Electron Technology (Poland)
Wojciech Slysz, Institute of Electron Technology (Poland)
Maria Grynglas, Institute of Electron Technology (Poland)
Andrzej Uszynski, Institute of Electron Technology (Poland)
Remigiusz Grodecki, Institute of Electron Technology (Poland)
Piotr B. Grabiec, Institute of Electron Technology (Poland)
Sylwester Krzeminski, Institute of Electron Technology (Poland)
Tadeusz Budzynski, Institute of Electron Technology (Poland)
Andrzej Panas, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 5484:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II
Ryszard S. Romaniuk, Editor(s)

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