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Proceedings Paper

Characterizing the demons in high-NA phase-shifting masks
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Paper Abstract

Aerial image measurements, SEM measurements from printed photoresist images, and simulations are used to characterize second-order effects due to mask topography, high-NA electric-field vector addition, and mask fabrication tolerances in projection printing of advanced process monitors on special phase-shifting test reticles. Challenging phase-shifting mask designs have been developed in collaboration with DuPont Photomask, Inc., Photronics Inc., ASMLithography, and Advanced MicroDevices for use as precision instruments to measure aberrations, system illumination, and the quality of the photomask itself. The results presented herein on pattern and probe-based aberration monitors show that, while the imaging of the probe portion of the target is dominated by errors in mask geometry and electromagnetic edge effects, high-NA effects play very little role in their image formation. The results also show that the full target suffers from mask edge electromagnetic effects and high-NA vector effects, implying that the ring patterns in the target emphasize those locations in the lens which are most susceptible to high-angle effects.

Paper Details

Date Published: 6 December 2004
PDF: 11 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.568758
Show Author Affiliations
Garth C. Robins, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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