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Proceedings Paper

Maintaining lithographic quality during OPC for low-k1 and MEEF processes constrained by mask dimensional rules
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Paper Abstract

Mask fabrication rules can interfere with the ability of OPC and RET shape generation to achieve the best lithographic quality on silicon. With low k1 lithography, ideal correction shapes dictated by lithography-based simulation frequently violate mask geometry constraints. Because the scaled spatial bandwidth of the wafer lithography process is lower than that of the mask process there are some degrees of freedom in OPC shape generation to optimize for lithographic accuracy and mask compliance together. In this paper we discuss strategies to embed mask rule compliance in correct-by-construction model-based OPC.

Paper Details

Date Published: 6 December 2004
PDF: 7 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.568550
Show Author Affiliations
Christopher M. Cork, Synopsys, Inc. (United States)
Lawrence S. Melvin III, Synopsys, Inc. (United States)
Michael Miller, Synopsys, Inc. (United States)
Robert M. Lugg, Synopsys, Inc. (United States)
Michael L. Rieger, Synopsys, Inc. (United States)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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