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Proceedings Paper

SnS films prepared by sulfuration of Sn precursor layers
Author(s): Shuying Cheng; Nanbao Zhong; Cichang Huang; Guonan Chen
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Paper Abstract

In this study, tin precursor layers were deposited on ITO glass substrates by thermal evaporation, and sulphurised in a vacuum furnace at the temperature range between 423-673K, in order to translate the tin layers into compound SnS layers. All the layers synthesized were characterized with X-ray diffractograms, microstructure analysis. It was found that the best SnS films were synthesized for sulphurisation at temperature 573-673K, and they were polycrystalline with a strong {111} preferred orientation, and they had orthorhombic crystal structure with a grain size of a few hundred nanometers and exhibited near stoichiometric SnS composition. The near stoichiometric SnS film was measured to have a p-type electrical conductivity and a resistivity of the order of 102 Ω.cm , and its optical properties were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence in the wavelength range 400-2500nm, the films were transparent for a wavelength >1250nm.

Paper Details

Date Published: 20 January 2005
PDF: 5 pages
Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); doi: 10.1117/12.568466
Show Author Affiliations
Shuying Cheng, Fuzhou Univ. (China)
Nanbao Zhong, Fuzhou Univ. (China)
Cichang Huang, Fuzhou Univ. (China)
Guonan Chen, Fuzhou Univ. (China)


Published in SPIE Proceedings Vol. 5633:
Advanced Materials and Devices for Sensing and Imaging II
Anbo Wang; Yimo Zhang; Yukihiro Ishii, Editor(s)

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