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Proceedings Paper

Shaped beam technology for nano-imprint mask lithography
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Paper Abstract

the Leica SB350MW 50keV shaped-beam e-beam lithography tool was used to write large-area 1X templates applicable in Step and Flash Imprint Lithography (S-FIL). This paper describes how information from the pattern analysis can be used to define the ZEP7000 resist exposure optimization technique for the SB350 MW tool together with the Motorola template pattern transfer process to obtain final template images in the transparent template. As a result of the complete process, well-resolved trenches measuring 33 nm and contacts as small as 44nm were obtained. Further improvements in the resist patterning will be possible by an adaptation of our standard proximity corrector (currently used in the 90 nm node maskmaking) with a high resolution upgrade.

Paper Details

Date Published: 2 June 2004
PDF: 5 pages
Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); doi: 10.1117/12.568035
Show Author Affiliations
Peter Hudek, Leica Microsystems Lithography GmbH (Germany)
Dirk Beyer, Leica Microsystems Lithography GmbH (Germany)
Timothy R. Groves, Leica Microsystems Lithography GmbH (Germany)
Olaf K. Fortagne, Leica Microsystems Lithography GmbH (Germany)
William J. Dauksher, Motorola (United States)
David P. Mancini, Motorola (United States)
Kevin J. Nordquist, Motorola (United States)
Douglas J. Resnick, Motorola (United States)


Published in SPIE Proceedings Vol. 5504:
20th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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