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Proceedings Paper

Avoidance/reduction of charging effects in case of partially insufficient substrate conductivity when using ESPACER 300Z
Author(s): Rainer Plontke; Lutz Bettin; Dirk Beyer; Joerg Butschke; Mathias Irmscher; Corinna Koepernik; Bernd Leibold; Armelle B. E. Vix; Peter Voehringer
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Paper Abstract

The aim is to apply e-beam lithography for second level imaging of Alternating Phase Shift Masks (altPSM) in the 65 nm node and below. Difficulties due to charging effects arise when exposing areas where the chromium absorber has been cleared away. In order to achieve correct pattern placement, the commercial water-soluble conductive ESPACER 300Z top coat from Showa Denka is applied in combination with chemically amplified resist of type FEP171. The paper describes the method and algorithm to test the efficacy of the material and the technological steps taken to avoid or reduce charge effects. The obtained overlay accuracy proves the ESPACER/FEP171 combination a promising approach for future altPSM manufacturing.

Paper Details

Date Published: 2 June 2004
PDF: 9 pages
Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); doi: 10.1117/12.568033
Show Author Affiliations
Rainer Plontke, Leica Microsystems Lithography GmbH (Germany)
Lutz Bettin, Leica Microsystems Lithography GmbH (Germany)
Dirk Beyer, Leica Microsystems Lithography GmbH (Germany)
Joerg Butschke, Institut fuer Mikroelektronik Stuttgart (Germany)
Mathias Irmscher, Institut fuer Mikroelektronik Stuttgart (Germany)
Corinna Koepernik, Institut fuer Mikroelektronik Stuttgart (Germany)
Bernd Leibold, Institut fuer Mikroelektronik Stuttgart (Germany)
Armelle B. E. Vix, Infineon Technologies AG (Germany)
Peter Voehringer, Institut fuer Mikroelektronik Stuttgart (Germany)


Published in SPIE Proceedings Vol. 5504:
20th European Conference on Mask Technology for Integrated Circuits and Microcomponents

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