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Proceedings Paper

Investigation of Cr etch chamber seasoning
Author(s): Pavel Nesladek; Guenther G. Ruhl; Marcel Kristlib
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Paper Abstract

One of the most critical steps for photomask CD off-target is the patterning of the mask. Here the instability of the dry etch process contributes directly to the stability of the CD value. The increasing demands on high-end masks cause a narrowing of both mask CD off-target and CD uniformity specifications, and accordingly the process stability has to be improved to fulfill these criteria. In this work we investigated the correlation between hardware parameters, basic etch process parameters and the corresponding CD mean-to-target value. Correlations between CD mean-to-target and Cr etch rate as well as effects of chamber seasoning after wet cleans are discussed.

Paper Details

Date Published: 2 June 2004
PDF: 10 pages
Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); doi: 10.1117/12.568015
Show Author Affiliations
Pavel Nesladek, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Guenther G. Ruhl, Infineon Technologies AG (Germany)
Marcel Kristlib, Infineon Technologies AG (Germany)

Published in SPIE Proceedings Vol. 5504:
20th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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