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Proceedings Paper

Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy
Author(s): Eva M. Campo; Tomas Hierl; James C.M. Hwang; Yuanping Chen; Gregory Brill; Nibir K. Dhar
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Paper Abstract

For the first time, cathodoluminescence of CdSexTe1-x (with x = 0-1) films grown by molecular beam epitaxy on (211) Si substrates were systematically studied and compared with photoluminescence. The Se mole fraction was consistently determined by x-ray rocking-curve diffraction, wavelength-dispersive spectroscopy, and Rutherford backscattering. The band gap energy, as determined by both cathodoluminescence and photoluminescence, was found consistent with literature. The band gap energy varied parabolically with composition as predicted by theory. The results suggest cathodoluminescence can be used to conveniently map composition fluctuations such as Se segregation in CdSexTe1-x films, with higher spatial resolution than photoluminescence.

Paper Details

Date Published: 22 October 2004
PDF: 6 pages
Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.567430
Show Author Affiliations
Eva M. Campo, Lehigh Univ. (United States)
Tomas Hierl, Lehigh Univ. (United States)
James C.M. Hwang, Lehigh Univ. (United States)
Yuanping Chen, Army Research Lab. (United States)
Gregory Brill, Army Research Lab. (United States)
Nibir K. Dhar, Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 5564:
Infrared Detector Materials and Devices
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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