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Proceedings Paper

Design and analysis of wide-band InGaAlAs/InP superluminescent light-emitting diodes
Author(s): Alain Champagne; Michel Lestrade; Romain Maciejko
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Paper Abstract

We use a quasi-three-dimensional numerical model combining finite element calculations in the x - y plane and a longitudinal optical model for the design and the simulation of wide band superluminescent InGaAlAs/InP light emitting diodes (SLEDs). It is shown that by using an active region with a continuously varying composition, bulk devices can provide singlelobe spectra of more than 100 nm full-width-at-half-maximum (FWHM) and output powers of a few tens of mW. This is broader than multiple quantum-well (MQW) device singlelobe spectra which do not exceed ~70 nm FWHM in the same power range.

Paper Details

Date Published: 20 December 2004
PDF: 10 pages
Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); doi: 10.1117/12.567345
Show Author Affiliations
Alain Champagne, Ecole Polytechnique de Montreal (Canada)
Michel Lestrade, Ecole Polytechnique de Montreal (Canada)
Romain Maciejko, Ecole Polytechnique de Montreal (Canada)


Published in SPIE Proceedings Vol. 5577:
Photonics North 2004: Optical Components and Devices
John C. Armitage; Simon Fafard; Roger A. Lessard; George A. Lampropoulos, Editor(s)

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