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Proceedings Paper

CMOS-compatible polysilicon MSM photodetector for 1550-nm light
Author(s): Yumei Liu; N. Garry Tarr; Andrew P. Knights
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Paper Abstract

Interdigitated metal-semiconductor-metal (MSM) photodetectors operating at 1550 nm were fabricated by depositing metal contacts on top of polycrystalline silicon (polysilicon), which was deposited by a variety of techniques. The highest responsivity was 0.66 mA/W, corresponding to an external quantum efficiency of 0.16%, obtained from a 2 μm thick polysilicon sample. Using Raman spectroscopy, it was found that polysilicon with grain sizes between 6 nm and 13 nm provides the best photoresponse at 1550nm.

Paper Details

Date Published: 20 December 2004
PDF: 4 pages
Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); doi: 10.1117/12.567094
Show Author Affiliations
Yumei Liu, Carleton Univ. (Canada)
N. Garry Tarr, Carleton Univ. (Canada)
Andrew P. Knights, McMaster Univ. (Canada)


Published in SPIE Proceedings Vol. 5577:
Photonics North 2004: Optical Components and Devices
John C. Armitage; Simon Fafard; Roger A. Lessard; George A. Lampropoulos, Editor(s)

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