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Proceedings Paper

Internal efficiency analysis of 280-nm light emitting diodes
Author(s): Joachim Piprek; Craig G. Moe; Sarah L. Keller; Shuji Nakamura; Steven P. DenBaars
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Paper Abstract

Compact ultraviolet light sources are currently of high interest for a range of applications, including solid-state lighting, short-range communication, and bio-chemical detection. We report on the design and analysis of AlGaN-based light-emitting diodes with an emission wavelength near 280 nm. Internal device physics is investigated by three-dimensional numerical simulation. The simulation incorporates a drift-diffusion model for the carrier transport, built-in polarization, the wurtzite energy band-structure of strained quantum wells, as well as radiative and nonradiative carrier recombination. Critical material parameters are identified and their impact on the simulation results is investigated. Limitations of the internal quantum efficiency by electron leakage and nonradiative recombination are analyzed. Increasing the stopper layer bandgap is predicted to improve the quantum efficiency and the light output of our LED substantially.

Paper Details

Date Published: 20 December 2004
PDF: 8 pages
Proc. SPIE 5594, Physics and Applications of Optoelectronic Devices, (20 December 2004); doi: 10.1117/12.567084
Show Author Affiliations
Joachim Piprek, Univ. of California/Santa Barbara (United States)
Craig G. Moe, Univ. of California/Santa Barbara (United States)
Sarah L. Keller, Univ. of California/Santa Barbara (United States)
Shuji Nakamura, Univ. of California/Santa Barbara (United States)
Steven P. DenBaars, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 5594:
Physics and Applications of Optoelectronic Devices
Joachim Piprek, Editor(s)

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