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Proceedings Paper

In-situ characterization of SiO2 deposition and growth for gate-oxides
Author(s): Michael Liehr
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Paper Details

Date Published: 1 February 1992
PDF: 11 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56673
Show Author Affiliations
Michael Liehr, IBM/Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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