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Proceedings Paper

Damage and RTA kinetics in Ar+ and Si+ ion-implanted CZ silicon characterized by thermal wave modulated optical reflectance
Author(s): Sookap Hahn; Walter Lee Smith; Tohru Hara; H. Hagiwara; H. Suzuki; Yeong-Keun Kwon; Kwang-Il Kim; Y.-H. Bae; W. J. Chung; Charles B. Yarling; L. A. Larson; Richard Meinecke
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Paper Details

Date Published: 1 February 1992
PDF: 10 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56670
Show Author Affiliations
Sookap Hahn, Stanford Univ. (United States)
Walter Lee Smith, Therma-Wave, Inc. (United States)
Tohru Hara, Hosei Univ. (Japan)
H. Hagiwara, Hosei Univ. (Japan)
H. Suzuki, Hosei Univ. (Japan)
Yeong-Keun Kwon, Research Institute of Industrial Science and Technology (South Korea)
Kwang-Il Kim, Research Institute of Industrial Science and Technology (South Korea)
Y.-H. Bae, Research Institute of Industrial Science and Technology (South Korea)
W. J. Chung, Research Institute of Industrial Science and Technology (South Korea)
Charles B. Yarling, Ion Implant Services (United States)
L. A. Larson, National Semiconductor Corp. (United States)
Richard Meinecke, AG Associates (United States)


Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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