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Proceedings Paper

Damage and RTA kinetics in Ar+ and Si+ ion-implanted CZ silicon characterized by thermal wave modulated optical reflectance
Author(s): Sookap Hahn; Walter Lee Smith; Tohru Hara; H. Hagiwara; H. Suzuki; Yeong-Keun Kwon; Kwang-Il Kim; Y.-H. Bae; W. J. Chung; Charles B. Yarling; L. A. Larson; Richard Meinecke
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Paper Abstract

In this study, damage induced by Ar+ and Si+ ion implantation and its annealing behavior during rapid thermal annealing for 10 sec at temperatures between 575-1100°C were investigated by thermal wave modulated optical reflectance, deep level transient spectroscopy, reflection high energy electron diffraction, Rutherford backscattering aligned spectra and transmission electron microscopy. Our data show that (1) thermal wave signal and its variation with repect to rapid thermal anneal temperature strongly depend upon implant dose and anneal temperature; (2) both implant species induce four distinctive deep trap levels; (3) these traps evolve during rapid thermal annealing!; and (4) for the single Si+ ion implanted samples, the variation of total trap concentration with respect to rapid thermal anneal temperatures follows that of TW. However, in the case of Ar+ ion implanted samples, no apparent correlation between thermal wave signal and DLTS trap condition could be made.

Paper Details

Date Published: 1 February 1992
PDF: 10 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56670
Show Author Affiliations
Sookap Hahn, Stanford Univ. (United States)
Walter Lee Smith, Therma-Wave, Inc. (United States)
Tohru Hara, Hosei Univ. (Japan)
H. Hagiwara, Hosei Univ. (Japan)
H. Suzuki, Hosei Univ. (Japan)
Yeong-Keun Kwon, Research Institute of Industrial Science and Technology (South Korea)
Kwang-Il Kim, Research Institute of Industrial Science and Technology (South Korea)
Y.-H. Bae, Research Institute of Industrial Science and Technology (South Korea)
W. J. Chung, Research Institute of Industrial Science and Technology (South Korea)
Charles B. Yarling, Ion Implant Services (United States)
L. A. Larson, National Semiconductor Corp. (United States)
Richard Meinecke, AG Associates (United States)


Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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