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Proceedings Paper

InGaAsN- and GaAsN-based quantum well lasers and detectors for optical sensing in 1.3 and 1.55 µm
Author(s): Alvaro Guzman; J. Miguel-Sanchez; Esperanza Luna; Elias Munoz
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Paper Abstract

In this work we show dilute nitride (InGaAsN and GaAsN) based laser diodes and detectors grown by Molecular Beam Epitaxy as good candidates to be used in optical fiber sensors applications. The maturity of GaAs technology allow us to develop laser devices less expensive and complex than the present InP based diodes which exhibit limited performances. Laser emission up to 1.23 μm is achieved for these devices. In addition, a new generation of (In)GaAsN quantum well intersubband detectors is also presented. This structures can be tailored to operate in a very short interval of wavelengths (namely 0.4 to 1 μm) centered in the range between 1.3 and 2 μm with a responsivity around 3 mA/W. The excellent selectivity of these detectors make them suitable to be matched with the emission wavelength of the source, thus avoiding the interference of external light sources. Both devices can be tuned to work in the range of interest for optical fibers, giving rise to a number of potential applications including Er-doped optical amplifiers, and optical fiber sensors.

Paper Details

Date Published: 9 June 2004
PDF: 4 pages
Proc. SPIE 5502, Second European Workshop on Optical Fibre Sensors, (9 June 2004); doi: 10.1117/12.566670
Show Author Affiliations
Alvaro Guzman, Univ. Politecnica de Madrid (Spain)
J. Miguel-Sanchez, Univ. Politecnica de Madrid (Spain)
Esperanza Luna, Univ. Politecnica de Madrid (Spain)
Elias Munoz, Univ. Politecnica de Madrid (Spain)

Published in SPIE Proceedings Vol. 5502:
Second European Workshop on Optical Fibre Sensors
Jose Miguel Lopez-Higuera; Brian Culshaw, Editor(s)

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