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Proceedings Paper

Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition
Author(s): James C. Sturm; Xiaodong Xiao; H. Manoharan; P. V. Schwartz
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Paper Abstract

Through proper reactor design and accurate temperature measurement, high quality silicon/silicon-germanium alloy (Si1-xGex) strained layer structures can be grown by Rapid Thermal Chemical Vapor Deposition with growth temperatures in the 600-700 ° C range. Photoluminescence measurements show well resolved band-edge features, indicating that the films are of very high quality. Quantum confinement effects have also been observed in quantum wells with widths down to 3 nm.

Paper Details

Date Published: 1 February 1992
PDF: 9 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56667
Show Author Affiliations
James C. Sturm, Princeton Univ. (United States)
Xiaodong Xiao, Princeton Univ. (United States)
H. Manoharan, Princeton Univ. (United States)
P. V. Schwartz, Princeton Univ. (United States)

Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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