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Proceedings Paper

Epitaxial growth and processing of Si1-xGex/Si for heterojunction bipolar transistors using rapid thermal techniques
Author(s): Judy L. Hoyt; T. Ghani; D. B. Noble; James F. Gibbons
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Paper Details

Date Published: 1 February 1992
PDF: 12 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56666
Show Author Affiliations
Judy L. Hoyt, Stanford Univ. (United States)
T. Ghani, Stanford Univ. (United States)
D. B. Noble, Stanford Univ. (United States)
James F. Gibbons, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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