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Proceedings Paper

Uniformity characterization of rapid thermal processor thin films
Author(s): Charles B. Yarling; Dawn-Marie Cook
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Paper Abstract

This paper will continue a review of the presently available whole-wafer mapping techniques and discuss their applicability to uniformity characterization of various rapid thermal processor (RTP) thin films. These techniques include spectral analysis, beam profile reflectometry, modulatedoptical reflectance, Fourier Transform Infrared Spectrometry (FTIR), four-point probe, reflective-optical inspection, x-ray topography (XRT), wafer flatness and stress. Selected contour and uniformity maps resulting from analysis of rapid thermal oxidation (modulated-optical reflectance, wafer thickness and stress measurements) and epi-silicon (reflective-optical inspection) RTP thin films will be presented. Comparisons between two different thin film thickness measurement technologies will be discussed

Paper Details

Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56665
Show Author Affiliations
Charles B. Yarling, Ion Implant Services (United States)
Dawn-Marie Cook, Prometrix Corp. (United States)


Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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