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Proceedings Paper

Improved wafer temperature measurements
Author(s): David W. Voorhes; Deirdre M. Hall
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Paper Abstract

Fast and accurate non-contacting temperature measurements are possible with a new approach which offers significant advantages over optical pyrometry. By using laser extensometry to measure in-plane thermal expansion, the temperature of silicon wafers can be determined during rapid thermal processing to better than 0.5 °C accuracy from room temperature to more than 1300 °C. This approach is entirely non-contacting and works on wafer surfaces exactly as they are, with no need for calibration procedures or emissivity determinations. Its 0 1 °C resolution and rapid response make it well-suited for dosed loop control of rapid thermal processing. In addition, this measurement concept lends itself well to compact packaging at low cost.

Paper Details

Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56663
Show Author Affiliations
David W. Voorhes, OPTRA, Inc. (United States)
Deirdre M. Hall, OPTRA, Inc. (United States)


Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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