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Proceedings Paper

Application of modern quality improvement techniques to rapid thermal processing
Author(s): Joseph C. Davis; Ronald S. Gyurcsik; Jeng-Chang Lu; Richard H. Perkins
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Paper Abstract

Modem statistical modeling techniques are applied to the characterization and optimization of Rapid Thermal Chemical Vapor Deposition. The problems of deposition during process ramps and thickness uniformity modeling wafer are addressed. A two-phase fractional factorial experimental design is used to generate models for the deposition rate, uniformity measures, and normalized time responses. A constrained algebraic optimization algorithm is used to find the optimum settings for the reactor for the deposition of 2000A of polysilicon. The methods that are developed to handle these problems are shown in an application to the deposition of polysilicon in a LeiskTM reactor.

Paper Details

Date Published: 1 February 1992
PDF: 13 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56661
Show Author Affiliations
Joseph C. Davis, North Carolina State Univ. (United States)
Ronald S. Gyurcsik, North Carolina State Univ. (United States)
Jeng-Chang Lu, North Carolina State Univ. (United States)
Richard H. Perkins, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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