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Proceedings Paper

In-situ monitoring of semiconductor wafer temperature using infrared interferometry
Author(s): C. F. A. van Os; Brian N. Chapman
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Paper Abstract

This paper will briefly describe the theory of interferometry, and then detail the method, apparatus and preliminary results of experiments with the Tempest. Infrared laser interferometry is a well known technique for measuring layer thickness based upon assessing the optical thickness, or path length, L.

Paper Details

Date Published: 1 January 1992
PDF: 4 pages
Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56657
Show Author Affiliations
C. F. A. van Os, Lucas Labs. (United States)
Brian N. Chapman, Lucas Labs. (United States)

Published in SPIE Proceedings Vol. 1594:
Process Module Metrology, Control and Clustering
Cecil J. Davis; Irving P. Herman; Terry R. Turner, Editor(s)

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