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Proceedings Paper

Tetrabenzoporphyrin semiconductor for transistor applications
Author(s): Shinji Aramaki; Yoshimasa Sakai; Ryuichi Yoshiyama; Kiyoshi Sugiyama; Noboru Ono; Jin Mizuguchi
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Paper Abstract

An organic field effect transistor (FET) device based on a solution-processible tetrabenzoporphyrin (BP) has been developed. BP is derived from its precursor that is soluble in some organic solvents and gives an amorphous film of high quality by spin coating. A polycrystalline film of BP is obtained by thermal conversion of the precursor at about 200 degree C. The FET characteristics are found to largely depend on the purity, device structure, and fabrication process. The device performance was: mobility of 1.7 X 10-2 cm2/Vs and on/off ratio of 105. We have also analyzed the crystal structure of BP and characterized its electronic and morphological properties.

Paper Details

Date Published: 18 October 2004
PDF: 9 pages
Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); doi: 10.1117/12.566540
Show Author Affiliations
Shinji Aramaki, Mitsubishi Chemical Group Science & Technology Research Ctr. (Japan)
Yoshimasa Sakai, Mitsubishi Chemical Group Science & Technology Research Ctr. (Japan)
Ryuichi Yoshiyama, Mitsubishi Chemical Group Science & Technology Research Ctr. (Japan)
Kiyoshi Sugiyama, Mitsubishi Chemical Group Science & Technology Research Ctr. (Japan)
Noboru Ono, Ehime Univ. (Japan)
Jin Mizuguchi, Yokohama National Univ. (Japan)


Published in SPIE Proceedings Vol. 5522:
Organic Field-Effect Transistors III
Ananth Dodabalapur, Editor(s)

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