Share Email Print
cover

Proceedings Paper

Advances in liquid phase epitaxial growth of Hg1-xCdxTe for SWIR through VLWIR photodiodes
Author(s): Paul LoVecchio; Kwok Wong; Themis Parodos; Stephen P. Tobin; Mark A. Hutchins; Peter W. Norton
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Hg1-XCdXTe photodiode arrays have assumed a critical importance for systems requiring sensitivity in any one of the infrared bands of interest extending from the SWIR 1-3 micrometer band to the VLWIR >14 micrometer band. As arrays have become larger, system requirements more stringent and cutoff wavelengths longer, more pressure has been placed on improving the Liquid Phase Epitaxial (LPE) Hg1-XCdXTe growth technique at BAE Systems. In this paper we will report on improvements made in each critical aspect of LPE growth, covering the entire range of Hg1-XCdXTe compositions required for photodiodes with cut-off wavelengths ranging from 3 to greater than 14 micrometers. Data presented will demonstrate that continual advances in LPE Hg1-XCdXTe growth techniques at BAE Systems promise high infrared system performance meeting SWIR to VLWIR needs.

Paper Details

Date Published: 22 October 2004
PDF: 8 pages
Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.566470
Show Author Affiliations
Paul LoVecchio, BAE Systems, Inc. (United States)
Kwok Wong, BAE Systems, Inc. (United States)
Themis Parodos, BAE Systems, Inc. (United States)
Stephen P. Tobin, BAE Systems, Inc. (United States)
Mark A. Hutchins, BAE Systems, Inc. (United States)
Peter W. Norton, BAE Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 5564:
Infrared Detector Materials and Devices
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

© SPIE. Terms of Use
Back to Top