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Proceedings Paper

Novel microspot dielectric film thickness measurement system
Author(s): David Willenborg; Susan M. Kelso; Jon L. Opsal; Jeffrey T. Fanton; Allan Rosencwaig
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Paper Abstract

The semiconductor industry is moving towards thinner dielectric films (less than 100 angstroms), more complex film structures (oxide on polysilicon on oxide on silicon) and smaller lateral geometries (less than 1 micron). The attendant measurement requirements demand more than incremental improvement of existing methods. In this paper, a novel laser-based dielectric film measurement system is described that meets these requirements by bridging the gap between spectrophotometer speed and ellipsometer precision while measuring with a 0.9 micron focused laser spot. The operating principles of a new technique which we call Beam Profile Reflectometry are discussed and data are presented for a number of different single- and multi-layer film structures relevant to microelectronics processing.

Paper Details

Date Published: 1 January 1992
PDF: 12 pages
Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56646
Show Author Affiliations
David Willenborg, Therma-Wave, Inc. (United States)
Susan M. Kelso, Therma-Wave, Inc. (United States)
Jon L. Opsal, Therma-Wave, Inc. (United States)
Jeffrey T. Fanton, Therma-Wave, Inc. (United States)
Allan Rosencwaig, Therma-Wave, Inc. (United States)


Published in SPIE Proceedings Vol. 1594:
Process Module Metrology, Control and Clustering
Cecil J. Davis; Irving P. Herman; Terry R. Turner, Editor(s)

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