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Proceedings Paper

Light scattering methods for semiconductor process monitoring and control
Author(s): Richard A. Gottscho; Matthew Vernon; Jeffrey A. Gregus; E. Yoon; K. P. Giapis; Todd R. Hayes; William S. Hobson; Lee M. Clark; J. Kruskal; Diane Lambert; Avi Kornblit; D. Sinatore
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Paper Abstract

Light scattering methods are being used in semiconductor device fabrication for such diverse purposes as particulate monitoring and linewidth control. In this overview, we focus on applications of light scattering for monitoring reactively ion etched trench profiles and plasma passivation of III-V materials.

Paper Details

Date Published: 1 January 1992
PDF: 7 pages
Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56644
Show Author Affiliations
Richard A. Gottscho, AT&T Bell Labs. (United States)
Matthew Vernon, Photronics (United States)
Jeffrey A. Gregus, AT&T Bell Labs. (United States)
E. Yoon, AT&T Bell Labs. (United States)
K. P. Giapis, AT&T Bell Labs. (United States)
Todd R. Hayes, AT&T Bell Labs. (United States)
William S. Hobson, AT&T Bell Labs. (United States)
Lee M. Clark, AT&T Bell Labs. (United States)
J. Kruskal, AT&T Bell Labs. (United States)
Diane Lambert, AT&T Bell Labs. (United States)
Avi Kornblit, AT&T Bell Labs. (United States)
D. Sinatore, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 1594:
Process Module Metrology, Control and Clustering
Cecil J. Davis; Irving P. Herman; Terry R. Turner, Editor(s)

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