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Proceedings Paper

Application of chemometrics to optical emission spectroscopy for plasma monitoring
Author(s): Michael P. Splichal; Harold M. Anderson
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Paper Abstract

Real-time plasma etch process monitoring, based on sensors which measure plasma properties that relate directly to desire etch features, is critical to the manufacturability of future-generation integrated microelectronics. This study reports on the development of spatially resolved optical emission spectroscopy tools and spectral signature analysis techniques which, taken together, show promise for meeting the need for such a sensor-based tool. This approach to plasma monitoring requires the development of optical emission calibration data sets, which in this case were obtained using the GEC Reference Cell plasma etch reactor (a RIE RF discharge system developed for interlaboratory comparisons). Systematic electrical probe measurements of the current and voltage waveform characteristics of Ar and CF4/CHF3 discharges in the Cell are reported and shown to be a sensitive indicator of both variations in Cell to Cell characteristics and process-induced variability within a Cell. Variations in the optical emission intensity show a near unity correlation with probe measurements if a broad spectrum of the emission is examined using multivariate statistical algorithms (chemometrics) and the spatial dependence of the emission is considered. Preliminary results involving further application of this spectral signature analysis technique to silicon dioxide etching are discussed.

Paper Details

Date Published: 1 January 1992
PDF: 15 pages
Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56632
Show Author Affiliations
Michael P. Splichal, Univ. of New Mexico (United States)
Harold M. Anderson, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 1594:
Process Module Metrology, Control and Clustering
Cecil J. Davis; Irving P. Herman; Terry R. Turner, Editor(s)

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