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Proceedings Paper

Single-wafer high-pressure oxidation
Author(s): Charles A. Boitnott; David R. Craven
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Paper Abstract

Cluster tool demands on oxidation process for device fabrication leads to requirement of single wafer high pressure hot process tool. A joint development project between GaSonics/IPC and Texas Instruments has produced a working tool capable of delivering high quality oxides and excellent reflow performance to meet the future needs of the industry.

Paper Details

Date Published: 1 January 1992
PDF: 8 pages
Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56622
Show Author Affiliations
Charles A. Boitnott, GaSonics/IPC (United States)
David R. Craven, GaSonics/IPC (United States)


Published in SPIE Proceedings Vol. 1594:
Process Module Metrology, Control and Clustering
Cecil J. Davis; Irving P. Herman; Terry R. Turner, Editor(s)

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