Share Email Print

Proceedings Paper

Single-wafer high-pressure oxidation
Author(s): Charles A. Boitnott; David R. Craven
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Cluster tool demands on oxidation process for device fabrication leads to requirement of single wafer high pressure hot process tool. A joint development project between GaSonics/IPC and Texas Instruments has produced a working tool capable of delivering high quality oxides and excellent reflow performance to meet the future needs of the industry.

Paper Details

Date Published: 1 January 1992
PDF: 8 pages
Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56622
Show Author Affiliations
Charles A. Boitnott, GaSonics/IPC (United States)
David R. Craven, GaSonics/IPC (United States)

Published in SPIE Proceedings Vol. 1594:
Process Module Metrology, Control and Clustering
Cecil J. Davis; Irving P. Herman; Terry R. Turner, Editor(s)

© SPIE. Terms of Use
Back to Top