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Proceedings Paper

InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications
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Paper Abstract

InGaAs/InGaP quantum-dots have been grown by low-pressure metalorganic chemical vapor deposition technique on GaAs substrate. The important growth parameters, such as growth temperature, V/III ratio, etc, have been optimized. A 10-stack quantum-dot infrared photodetector based on these InGaAs dots showed a detectivity of 3.6x1010 cmHz1/2/W at 95K. The peak photoresponse was 4.7 μm with a cutoff at 5.2μm. A 256x256 middle-wavelength infrared focal plane array based on our quantum-dot detectors was fabricated via dry etching technique. The detector array was bonded to a silicon readout integrated circuit via flip chip bonding with indium bumps. A noise equivalent temperature difference of 509 mK was achieved for this array at 120K. With the goal of improving array uniformity, exploratory work into nanopillar structure IR detectors was also performed. Experimental methods and characterization results are presented here.

Paper Details

Date Published: 21 October 2004
PDF: 14 pages
Proc. SPIE 5563, Infrared Systems and Photoelectronic Technology, (21 October 2004); doi: 10.1117/12.565667
Show Author Affiliations
Stanley Tsao, Northwestern Univ. (United States)
Aaron V. Gin, Northwestern Univ. (United States)
Kan Mi, Northwestern Univ. (United States)
John Szafraniec, Northwestern Univ. (United States)
Wei Zhang, Northwestern Univ. (United States)
Hochul Lim, Northwestern Univ. (United States)
Thomas O'Sullivan, Northwestern Univ. (United States)
Jutao Jiang, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Gail J. Brown, Air Force Research Lab. (United States)
Meimei Z. Tidrow, Missile Defense Agency (United States)


Published in SPIE Proceedings Vol. 5563:
Infrared Systems and Photoelectronic Technology
C. Bruce Johnson; Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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