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Proceedings Paper

Optical characterization of 1-GHz silicon-based optical modulator
Author(s): Richard Jones; Ling Liao; Ansheng Liu; Mike S. Salib; Doron Rubin; Oded Cohen; Dean A. Samara-Rubio; Mario J. Paniccia
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Paper Abstract

In this paper the optical characterization of a novel, metal-oxide-silicon (MOS) capacitor-based, high speed, silicon optical modulator is presented. By using a capacitor based rather than the conventional p-i-n junction based architecture to modulate the free carrier density inside the waveguide, we show the realization of a fast, 2.5-GHz, optical modulator.

Paper Details

Date Published: 18 August 2004
PDF: 8 pages
Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.565628
Show Author Affiliations
Richard Jones, Intel Corp. (United States)
Ling Liao, Intel Corp. (United States)
Ansheng Liu, Intel Corp. (United States)
Mike S. Salib, Intel Corp. (United States)
Doron Rubin, Intel Corp. (Israel)
Oded Cohen, Intel Corp. (Israel)
Dean A. Samara-Rubio, Intel Corp. (United States)
Mario J. Paniccia, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 5451:
Integrated Optics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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