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Proceedings Paper

Optoelectronic sensors based on narrowband A3B5 alloys
Author(s): Nonna V. Zotova; Sergey A. Karandashev; Boris A. Matveev; A. V. Pentsov; Semen V. Slobodchikov; N. N. Smirnova; Nikolai M. Stus; Georgii N. Talalakin; I. I. Markov
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Paper Abstract

LPE growth at elevated temperatures has been used to fabricate high-quality InAsSbP and InGaAs p-n structures, emitting light in the wavelength range 2.5 - 4.7 micrometers . New IR LEDs and photodiodes based on InAsSbP and InGaAs have been tested and used for detection of CH4, CO2, and other gases. Transmittance spectra measurements have been carried out in the 3.1 - 3.5 micrometers spectral range using a 1 X 15 LED array, diffraction grating, and photodetector. The wavelength range used is optimized for near infrared transmittance analysis of hydrocarbons and some other gases.

Paper Details

Date Published: 1 March 1992
PDF: 12 pages
Proc. SPIE 1587, Chemical, Biochemical, and Environmental Fiber Sensors III, (1 March 1992); doi: 10.1117/12.56559
Show Author Affiliations
Nonna V. Zotova, A.F. Ioffe Physical-Technical Institute (Russia)
Sergey A. Karandashev, A.F. Ioffe Physical-Technical Institute (Russia)
Boris A. Matveev, A.F. Ioffe Physical-Technical Institute (Russia)
A. V. Pentsov, A.F. Ioffe Physical-Technical Institute (Russia)
Semen V. Slobodchikov, A.F. Ioffe Physical-Technical Institute (Russia)
N. N. Smirnova, A.F. Ioffe Physical-Technical Institute (Russia)
Nikolai M. Stus, A.F. Ioffe Physical-Technical Institute (Russia)
Georgii N. Talalakin, A.F. Ioffe Physical-Technical Institute (Russia)
I. I. Markov, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1587:
Chemical, Biochemical, and Environmental Fiber Sensors III

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