Share Email Print
cover

Proceedings Paper

Characterization of strain and crystallographic defects in HgI2 single crystals
Author(s): W. Brock Alexander; John Sandoval; Lodewijk van den Berg
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We investigated bulk-grown HgI2 crystals to better understand the nature of crystallographic defects and strain/stress in different growth regions of the crystal and their affect on the performance of HgI2-based radiation detectors. Double-axis and triple-axis high-resolution x-ray diffraction were used to characterize the mosaic structure and strain in HgI2. Rocking curves revealed significant mosaic spreading in <110> growth regions exhibiting X-defects versus X-defect-free <100> growth regions. Both <110> and <100> growth regions exhibited little strain (~0.01%). We report the narrowest rocking curves (~ 9 arcsec) to date on HgI2 as a result of the resolution of the instrument (~ 6 arcsec). Raman spectroscopy was used collaboratively to confirm little residual stress in the crystals. We developed a growth rate ratio (chi) and show this geometric model used to describe crystal shape and regions of <100> and <110> growth. Optical characterization of X-defects are presented and discussed. Further the influence of crystallographic defects and strain on radiation detector performance are discussed.

Paper Details

Date Published: 21 October 2004
PDF: 10 pages
Proc. SPIE 5540, Hard X-Ray and Gamma-Ray Detector Physics VI, (21 October 2004); doi: 10.1117/12.565027
Show Author Affiliations
W. Brock Alexander, Constellation Technology Corp. (United States)
John Sandoval, Constellation Technology Corp. (United States)
Lodewijk van den Berg, Constellation Technology Corp. (United States)


Published in SPIE Proceedings Vol. 5540:
Hard X-Ray and Gamma-Ray Detector Physics VI
Arnold Burger; Ralph B. James; Larry A. Franks, Editor(s)

© SPIE. Terms of Use
Back to Top